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 SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2515DX
DESCRIPTION *With TO-3PML package *High voltage *High speed switching *Built-in damper diode APPLICATIONS *For use in horizontal deflection circuits of PC monitors.
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25 )
SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Base current (Pulse) Total power dissipation Max.operating junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7.5 9 20 5 7.5 45 150 -55~150 UNIT V V V A A A A W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=100mA ;IB=0,L=25mH IE=600mA ;IC=0 IC=4.5A ;IB=0.9A IC=4.5A ;IB=0.9A VCE=BVCES; VBE=0 TC=125 VEB=6V; IC=0 IC=1A ; VCE=5V IC=4.5A ; VCE=5V IF=4.5A 5 MIN 800 7.5
BU2515DX
SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hFE-1 hFE-2 VF
TYP.
MAX
UNIT V
13.5 5.0 1.0 1.0 2.0 130 13 8 10.2 2.2
V V V mA mA
V
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
BU2515DX
Fig.2 Outline dimensions
3


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